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Figure 1.6 Absorbed energy-to-failure versus time-to-failure for RF pulse system and square pulse TLP system (with square pulse is for positive and negative polarity pulses)

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to 264 without ever going over. If a receiver does not expect to decrypt the same message twice, this limit needs to be implemented. Before any information is given to the other layers of the network model, the DEV veri es the CBC-MAC. If the CBC-MAC is not veri ed, all information that was received is destroyed. 9.4.2.8 Symbols Used. This last section contains Table 9.2, which lists the symbols used in the symmetric-key cryptography used by the IEEE 802.15.3 HR-WPAN. This was included at the end of this chapter to clarify any variables that were used that were not explicitly explained. 9.5 CONCLUSION

Figure 1.2 Unity radius smith chart with source and load stability circles. Region outside the Unity radius Smith chart is unstable source. Stability and ESD improvement achieved with shift along axis toward radial center

2 Plot the impedance of an inductor on an impedance versus log frequency plot for a given inductor of size, L0, at zero frequency Plot a constant impedance on the plot Show the difference between the ideal frequency independent load and the frequency dependent load 3 Given an LC tank with an inductor and a capacitor ideal element Derive the impedance of the LC tank circuit Derive the reactance of the LC tank network Derive the quality factor of the LC tank Plot it as a function of frequency 4 Given a design constraint of a constant reactance, derive the required capacitance as the frequency increases Assume the capacitance is an ESD diode How does the diode size decrease with the application frequency increase to maintain constant reactance What is the ESD robustness required per unit micron as the frequency increases to maintain a constant ESD robustness 5.

Given a design constraint of a constant reactance, derive the required capacitance as the frequency increases Assume that the capacitance is an ESD diode Assume a constant ESD robustness must also be maintained as the frequency of the RF application increases What is the ESD robustness required per unit micron as the frequency increases to maintain a constant ESD robustness 6 Draw all possible two component matching lters for L-match topology, using resistor, capacitor and inductor elements Which matching lters would not be suitable for ESD events Why 7 Draw all possible two component matching lters for T-match topology, using resistor, capacitor and inductor elements Which matching lters would not be suitable for ESD events Why 8 Draw all possible two component matching lters for -match topology, using resistor, capacitor, and inductor elements Which matching lters would not be suitable for ESD events Why 9.

Show examples of the three different topologies, where in each case an inductive shunt is used Assume the series element is a series capacitor How will the circuit respond to CDM events 10 As in the above problem, assume the series element is a resistor How will the circuit respond to ESD events on the input node How will the circuit respond to CDM events 11 In technology scaling, the substrate resistance increases to reduce the capacitance loading and to improve noise isolation between circuits Assuming a substrate resistance scaling parameter, a, derive how this in uences the diode ideality of a nwell to substrate diode 12 In technology scaling, the substrate resistance increases to reduce the capacitance loading and to improve noise isolation between circuits Assuming a substrate resistance scaling parameter, a, derive the effect on the self-heating (eg.

, temperature is equal to the power times the thermal resistance T PRTH) 13 Given a square signal pad, form an octagonal pad contained within the pad What is the dimension of the side of the octagonal pad What is the ratio of the capacitance of the.